Piezoelectric constant temperature dependence in strained [111]-oriented zinc-blende MQW-SOAs

Non-linear electro-elastic coupling in highly strained zinc-blende compounds: InGaP/GaP [111] quantum wells

Importance of second-order piezoelectric effects in zinc-blende semiconductors.

We show that the piezoelectric effect that describes the emergence of an electric field in response to a crystal deformation in III-V semiconductors such as GaAs and InAs has strong contributions from second-order effects that have been neglected so far. We calculate the second-order piezoelectric tensors using density-functional theory and obtain the piezoelectric field for [111]-oriented In(x...

Excitonic properties of strained wurtzite and zinc-blende GaNÕAlxGa1ÀxN quantum dots

We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite ~WZ! and zinc-blende ~ZB! crystal structures, as well as strained WZ GaN/AlGaN quantum dots. We show that the strain field significantly modifies the conductionand valence-band edges of GaN quantum dots. The piezoelectric field is found to govern excitonic properties of WZ GaN/AlN quantum dots, while it h...

Surface vacancies in II-VI and 111-V zinc blende semiconductors•>

We present calculations of the bound state energy levels of ideal vacancies near the ( 110) surface of some zinc blende II-VI and Ill-Y semiconductors: CdTe, ZnTe, GaAs, AlAs, InAs, and some alloys among them. Here we compare vacancies near the surface ofii-VI's with those ofiii-V's. In contrast to the III-V's, where a neutral vacancy has an odd number of electrons, a neutral vacancy in a II-VI...

Half-metallic Zinc-Blende Compounds

We report first-principles calculations of zinc-blende half-metals, identifying systems for epitaxial growth with semiconductors, and present calculations for CrAs/GaAs multilayers. We find that half-metallicity is conserved troughout the heterostructure, making this a good candidate for spintronics applications.